• Part: PTFB201402FC
  • Description: High Power RF LDMOS Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 412.16 KB
PTFB201402FC Datasheet (PDF) Download
Infineon
PTFB201402FC

Description

The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band.

Key Features

  • Broadband internal matching
  • Typical CW performance, 28 V, single side - Output power, P1dB = 70 W - Efficiency = 56%
  • Integrated ESD protection
  • Excellent thermal stability
  • Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power, per s