| Title | GaN FETs 400W, 48V, 2110-2200 MHz GaN-SiC HEMT |
| Description | The GTRB224402FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 750 mA, VGS(PEAK) = -5.15... |
| Features |
high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 750 mA,
VGS(PEAK) = -5.15 V, ƒ = 2200 MHz, 3GPP
WCDMA signal, PAR = 10 dB, 3.84 MHz BW
24
60
20
40
16
Efficiency
20
Gain
12
0
8
-20
PAR @ ...
|
| Datasheet |
 GTRB224402FC Datasheet - 915.41KB |
| Distributor |
Mouser Electronics |
| Stock | 0 In stock |
| Price |
50 units: 116.33 USD
|
| BuyNow |
 No Longer Stocked - Manufacturer a MACOM GTRB224402FC-V1-R0
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
Mouser Electronics |
50 units: 116.33 USD |
||
 Richardson RFPD |
No price available |
