GTRB224402FC
Description
The GTRB224402FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
Key Features
- GaN on SiC HEMT technology
- Human Body Model Class 1C (per ANSI/ ESDA/JEDEC JS-001)
- 2.75 Max. 50 -2.0 Unit Conditions V VDS =48 V, ID = 750 mA
