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GTRB224402FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTRB224402FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.

Key Features

  • high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 750 mA, VGS(PEAK) = -5.15 V, ƒ = 2200 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 20 40 16 Efficiency 20 Gain 12 0 8 -20 PAR @ 0.01% CCDF 4 -40 0 27 gtrb224402fc_g1 -60 32 37 42 47 52 Average Output Power (dBm) Features.
  • GaN on SiC HEMT technology.

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GTRB224402FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 2110– 2200 MHz Description The GTRB224402FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 750 mA, VGS(PEAK) = -5.15 V, ƒ = 2200 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 20 40 16 Efficiency 20 Gain 12 0 8 -20 PAR @ 0.