MGF0921A datasheet, fet equivalent, Mitsubishi

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Features and benefits

* High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm
* High power gain Gp=17dB(TYP.) @f=1.9GHz
* High power added efficiency ηadd=40%(TYP.) @f=1.9GHz,Pin=17.

Description

The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES
* High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm
* High power gain Gp=17dB(TYP.) @f=1.9GHz
* High power added efficiency ηadd=.

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