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NE5520279A-T1 Datasheet - NEC

NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET

NE5520279A-T1 Features

* LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX

* HIGH OUTPUT POWER: +32 dBm TYP 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Source 1.5±0.2 Source 0X001 4.4 MAX.

* HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 G

NE5520279A-T1 General Description

NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. APPLICATIONS .

NE5520279A-T1 Datasheet (166.32 KB)

Preview of NE5520279A-T1 PDF

Datasheet Details

Part number:

NE5520279A-T1

Manufacturer:

NEC

File Size:

166.32 KB

Description:

Necs 3.2 v / 2 w / l&s band medium power silicon ld-mosfet.

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TAGS

NE5520279A-T1 NECS 3.2 L &S BAND MEDIUM POWER SILICON LD-MOSFET NEC

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