NECS Datasheet | Specifications & PDF Download

NEC's GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV FEATURES • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYN

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NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz NE

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NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES • LOW COST PLASTIC PACKAGE • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA • H

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MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC

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MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC

Rating: 1 ★ (5 votes)

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz •

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NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc Output Power, POUT (dBm) 30.0 28.0 NE46100 NE4

Rating: 1 ★ (5 votes)

MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC

Rating: 1 ★ (5 votes)

PRELIMINARY DATA SHEET www.DataSheet4U.com NEC's NPN SiGe TRANSISTOR NESG210719 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIG

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NEC's 1550 nm InGaAsP MQW DFB LASER DIODE NX8503BG-CC IN COAXIAL PACKAGE NX8503CG-CC FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES • PEAK EMISSION W

Rating: 1 ★ (4 votes)

NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES • • • • LOW VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm LOW HEIGHT PROFILE: 1

Rating: 1 ★ (4 votes)

NEC's GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV FEATURES • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYN

Rating: 1 ★ (4 votes)

www.DataSheet4U.com NONLINEAR MODEL SCHEMATIC CCB NE68800 Q1 LB CCE LC LE BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE

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PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TY

Rating: 1 ★ (4 votes)

NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc Output Power, POUT (dBm) 30.0 28.0 NE46100 NE4

Rating: 1 ★ (4 votes)

NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTP

Rating: 1 ★ (4 votes)

MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC

Rating: 1 ★ (4 votes)

NEC's NPN SiGe RF TRANSISTOR www.DataSheet4U.com FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES

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NEC's 1.8 V L, S-BAND UPG2006TB SPDT SWITCH FEATURES • LOW INSERTION LOSS: LINS = 0.3 dB TYP. @ Vcont = 1.8 V/0 V, f = 1 GHz LINS = 0.45 dB TYP. @ Vco

Rating: 1 ★ (3 votes)

NEC's ¼ W SINGLE CONTROL UPG2012TK L, S-BAND SPDT SWITCH FEATURES • SUPPLY VOLTAGE: VDD = 2.7 to 3.0 V (2.8 V TYP.) • SINGLE SWITCH CONTROL VOLTAGE: V

Rating: 1 ★ (3 votes)