BLF4G10-120 transistor equivalent, uhf power ldmos transistor.
s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (t.
at frequencies from 800 MHz to 1000 MHz.
Table 1: Typical performance RF performance at Th = 25 °C in a common base clas.
120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit. Mode of operation CW 2-tone
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f (MHz)
VDS (V.
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