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BLF4G10-120 Datasheet

UHF power LDMOS transistor

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BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1: Typical performance
RF performance at Th = 25 °C in a common base class-AB test circuit.
Mode of f
operation (MHz)
VDS PL
(V) (W)
Gp ηD ACPR400 ACPR600
(dB) (%) (dBc) (dBc)
(typ)
(typ)
(typ)
EVMrms IMD3
(%) (dBc)
(typ)
CW
861 to 961 28 120
19 57 -
-
--
GSM EDGE 861 to 961 28 48 (AV) 19 40 61 [1] 72 [2] 1.5
-
2-tone
861 to 961 28 120 (PEP) 19 46 -
-
- 31
[1] ACPR400 at 30 kHz resolution bandwidth
[2] ACPR600 at 30 kHz resolution bandwidth
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V
and an IDq of 850 mA:
x Load power = 48 W (AV)
x Gain = 19 dB (typ)
x Efficiency = 40 % (typ)
x ACPR400 = 61 dBc (typ)
x ACPR600 = 72 dBc (typ)
x EVMrms = 1.5 % (typ)
s Easy power control
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (800 MHz to 1000 MHz)
s Internally matched for ease of use


NXP Semiconductors Electronic Components Datasheet

BLF4G10-120 Datasheet

UHF power LDMOS transistor

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Philips Semiconductors
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
1.3 Applications
s RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 800 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2: Pinning
Pin Description
BLF4G10-120 (SOT502A)
1 drain
2 gate
3 source
BLF4G10S-120 (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange
3. Ordering information
Simplified outline Symbol
11
3
[1] 2
23
sym039
1
3
[1]
2
1
2
3
sym039
Table 3: Ordering information
Type number
Package
Name
Description
Version
BLF4G10-120
-
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
SOT502A
BLF4G10S-120 -
earless flanged LDMOST ceramic package; 2 leads SOT502B
4. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
-
0.5
-
65
-
Max
65
+15
12
+150
200
Unit
V
V
A
°C
°C
9397 750 14549
Product data sheet
Rev. 01 — 10 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
2 of 14


Part Number BLF4G10-120
Description UHF power LDMOS transistor
Maker NXP
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