UPA2810 transistor equivalent, mos field effect transistor.
* Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A)
* Built-in gate protection diode
*.
of portable equipments.
FEATURES
* Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2.
The μ PA2810 is P-channel MOSFET designed for DC/DC converter and power management applications of portable equipments.
FEATURES
* Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = .
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