* Order code SCTH100N120G2-AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A
* AEC-Q101 qualified
* High speed switching performance
* Very fast and robust intrinsic body diode
* Low capacitance Applications
* Traction inverters
* DC-DC converters
* So
SCTH100N120G2-AG Datasheet (434.83 KB)
SCTH100N120G2-AG
434.83 KB
Automotive-grade silicon carbide power mosfet.
SCTH100N120G2-AG Datasheet Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-.
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