SCTH100N120G2-AG
SCTH100N120G2-AG is Automotive-grade silicon carbide Power MOSFET manufactured by STMicroelectronics.
Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
7 1 H2PAK-7
Drain (TAB)
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Features
Order code SCTH100N120G2-AG
VDS 1200 V
RDS(on)typ. 30 mΩ
ID 75 A
- AEC-Q101 qualified
- High speed switching performance
- Very fast and robust intrinsic body diode
- Low capacitance
Applications
- Traction inverters
- DC-DC converters
- Solar inverters
- OBC
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device Features remarkably low...
