SCTHC250N120G3AG datasheet, mosfet equivalent, STMicroelectronics

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SCTHC250N120G3AG Features and benefits

1 4 32 STPAK high creepage Drain(4) Gate(3) Driver source(2) Power source(1) 23
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* Order code SCTHC25.

SCTHC250N120G3AG Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very hig.

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