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STPSC8H065 Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins
  • Insulated voltage: 2500 VRMS
  • Typical package capacitance: 7 pF
  • Power efficient product
  • ECOPACK®2 pliant ponent

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STPSC8H065 Description

This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.