* (1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max) (IC = 1.0 A, IB = 20 mA) (3) High-speed switching: tf = 120 ns (typ.) (IC = 1.0 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Ba
TPCP8516 Datasheet (463.10 KB)
TPCP8516
463.10 KB
Silicon npn transistor.
Bipolar Transistors Silicon NPN Epitaxial Type TPCP8516 TPCP8516 1. Applications High-Speed Switching DC-DC Converters 2. Featur.
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