Datasheet4U Logo Datasheet4U.com

3SK256 - Silicon N Channel Dual Gate MOS Type FET

📥 Download Datasheet

Datasheet preview – 3SK256

Datasheet Details

Part number 3SK256
Manufacturer Toshiba Semiconductor
File Size 207.53 KB
Description Silicon N Channel Dual Gate MOS Type FET
Datasheet download datasheet 3SK256 Datasheet
Additional preview pages of the 3SK256 datasheet.

📁 Similar Datasheet

  • 3SK252 - RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD (NEC)
  • 3SK253 - RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD (NEC)
  • 3SK254 - RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD (NEC)
  • 3SK255 - RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD (NEC)
  • 3SK206 - RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD (NEC)
  • 3SK22 - Silicon N-Channel Transistor (Toshiba)
  • 3SK222 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR (NEC)
  • 3SK223 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR (NEC)
  • 3SK224 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR (NEC)
  • 3SK227 - Silicon N-Channel 4-pin MOSFET (Panasonic)
Other Datasheets by Toshiba Semiconductor
  • 3SK257 - Silicon N Channel Dual Gate MOS Type FET
  • 3SK258 - Silicon N Channel Dual Gate MOS Type FET
  • 3SK259 - Silicon N Channel Dual Gate MOS Type FET
  • 3SK207 - Silicon N Channel Dual Gate MOS Type FET
  • 3SK225 - Silicon N Channel Dual Gate MOS Type FET
  • 3SK226 - Silicon N Channel Dual Gate MOS Type FET
  • 3SK240 - GaAs N-Channel Dual Gate MES Type FET
  • 3SK249 - N-CHANNEL DUAL GATE MOS TYPE TRANSISTOR

Full PDF Text Transcription

Click to expand full text
3SK256 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK256 TV Tuner, UHF RF Amplifier Applications Unit: mm · Superior cross modulation performance. · Low reverse transfer capacitance: Crss = 0.015 pF (typ.) · Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.5 ±8 ±8 30 100 125 -55~125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-2K1B Weight: 0.006 g (typ.
Published: |