TC2997G
FEATURES
- 16 W Typical Power at 3.5 GHz
- 9 d B Typical Linear Power Gain at 3.5 GHz
- High Linearity: IP3 = 52 d Bm Typical
- High Power Added Efficiency: Nominal PAE of 37 %
- 100 % DC and RF Tested
- Flange Ceramic Package
- Suitable for Wi Max and WLL applications
PHOTO ENLARGEMENT
DESCRIPTION
The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The flange ceramic package provides the best thermal conductivity for the Ga As FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for mercial applications. ELECTRICAL SPECIFICATIONS
Symbol P1d B GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1d B Gain pression Point, Vd = 10V, Id = 4A, f=3.4
- 3.6GHz Linear Power Gain Vd = 10V, Id = 4A, f=3.4
- 3.6GHz
Intercept Point of the 3 -order Intermodulation, Vd = 10V, Id = 4A, f=3.4
- 3.6GHz,
- PSCL = 32 d Bm rd
MIN 41.5 8
TYP 42.5 9 52 37 18.75 13500...
