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TC2997G - GaAs Power FETs

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Transcom

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TC2997G GaAs Power FETs by Transcom - Datasheet Preview — Datasheet preview – TC2997G

Datasheet Details

Part number	TC2997G
Manufacturer	Transcom
File Size	164.02 KB
Description	GaAs Power FETs
Datasheet	TC2997G Datasheet
Additional preview pages of the TC2997G datasheet.

Product details

Description

The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Features

16 W Typical Power at 3.5 GHz.
9 dB Typical Linear Power Gain at 3.5 GHz.
High Linearity: IP3 = 52 dBm Typical.
High Power Added Efficiency: Nominal PAE of 37 %.
100 % DC and RF Tested.
Flange Ceramic Package.
Suitable for WiMax and WLL.

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Other Datasheets by Transcom

TC2997A - GaAs Power FETs
TC2997B - GaAs Power FETs
TC2997C - GaAs Power FETs
TC2997D - 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
TC2996A - GaAs Power FETs
TC2996B - GaAs Power FETs

Published: Aug 22, 2011 |