TC2997G Description
The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
TC2997G Key Features
- 16 W Typical Power at 3.5 GHz
- 9 dB Typical Linear Power Gain at 3.5 GHz
- High Linearity: IP3 = 52 dBm Typical
- High Power Added Efficiency: Nominal PAE of 37 %
- 100 % DC and RF Tested
- Flange Ceramic Package
- Suitable for WiMax and WLL