Full PDF Text Transcription for TC2997G (Reference)
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TC2997G. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.net TC2997G PRE2_20071107 Preliminary 3.5 GHz 16 W Flange Ceramic Packaged GaAs Power FETs FEATURES 16 W Typical Power at 3.5 GHz 9 dB Typical Linear ...
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r FETs FEATURES 16 W Typical Power at 3.5 GHz 9 dB Typical Linear Power Gain at 3.5 GHz High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Tested Flange Ceramic Package Suitable for WiMax and WLL applications PHOTO ENLARGEMENT DESCRIPTION The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commer
TC2997G Datasheet
