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AP10G03S - 30V N+P-Channel Enhancement Mode MOSFET

AP10G03S Description

sales.Mr.wang13826508770 www.sztssd.com AP10G03S 30V N+P-Channel Enhancement Mode MOSFET .
The AP10G03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

AP10G03S Applications

* , should be limited by total power dissipation. 2 AP10G03S Rve3.8 sales. Mr. wang13826508770 www. sztssd. com AP10G03S 30V N+P-Channel Enhancement Mode MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-So

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Datasheet Details

Part number
AP10G03S
Manufacturer
APM
File Size
2.40 MB
Datasheet
AP10G03S-APM.pdf
Description
30V N+P-Channel Enhancement Mode MOSFET

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30V N +P-Channel Enhancement Mode MOSFET APM
APM AP10G03S-like datasheet