AP10G03S 30V N+P-Channel Enhancement Mode MOSFET

APM

Description

sales.Mr.wang13826508770 www.sztssd.com AP10G03S 30V N+P-Channel Enhancement Mode MOSFET .
The AP10G03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number: AP10G03S
Manufacturer: APM
File Size: 2.40 MB
Datasheet: AP10G03S-APM.pdf
Description: 30V N+P-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. 2 AP10G03S Rve3.8 sales. Mr. wang13826508770 www. sztssd. com AP10G03S 30V N+P-Channel Enhancement Mode MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-So

AP10G03S Distributors

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AP10G03S 30V N +P-Channel Enhancement Mode MOSFET APM

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