AFN3112W Datasheet, Mosfet, Alfa-MOS

AFN3112W Features

• Mosfet
• ID=3.6A,RDS(ON)=105mΩ@VGS=10V
• ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V
• Super high density cell design for extremely low RDS (ON)
• Exceptional on-resistance

PDF File Details

Part number:

AFN3112W

Manufacturer:

Alfa-MOS

File Size:

845.93kb

Download:

📄 Datasheet

Description:

100v n-channel enhancement mode mosfet. AFN3112W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

AFN3112W Application

• Applications Features
• ID=3.6A,RDS(ON)=105mΩ@VGS=10V
• ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V
• Super high density cell design fo

TAGS

AFN3112W

Alfa-MOS

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