AFN3112W, AFN3112W-Alfa 100V N-Channel Enhancement Mode MOSFET

Alfa-MOS

Description

Alfa-MOS Technology AFN3112W 100V N-Channel Enhancement Mode MOSFET General .
AFN3112W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

📥 Download Datasheet

AFN3112W Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN3112W, AFN3112W-Alfa. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: AFN3112W, AFN3112W-Alfa
Manufacturer: Alfa-MOS
File Size: 845.93 KB
Datasheet: AFN3112W-Alfa-MOS.pdf
Description: 100V N-Channel Enhancement Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: AFN3112W, AFN3112W-Alfa.
Please refer to the document for exact specifications by model.

Features

* ID=3.6A,RDS(ON)=105mΩ@VGS=10V
* ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability

AFN3112W Distributors

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📌 All Tags

AFN3112W-Alfa 100V N-Channel Enhancement Mode MOSFET Alfa-MOS

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