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AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8818 Description

www.DataSheet4U.com AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

AO8818 Features

* VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 27mΩ (VGS = 2.5V) ESD Rating: 1500V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol

AO8818 Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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Datasheet Details

Part number
AO8818
Manufacturer
Alpha & Omega Semiconductors
File Size
180.75 KB
Datasheet
AO8818_AlphaOmegaSemiconductors.pdf
Description
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors AO8818-like datasheet