CS4N90A3HD-G Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS4N90A3HD-G, Silicon N-Channel Power MOSFET

VDSS 900 CS4N90 A3HD-G, the silicon N-channel Enhanced ID 4 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 100 which reduce the conduction loss, improve switching RDS(ON)Typ 2.6 performance and enhance the avalanche energy.

The transistor can be used in various

CS4N90A3HD-G Features

* Fast Switching

* Low ON Resistance(Rdson≤3Ω)

* Low Gate Charge (Typical Data:25.2nC)

* Low Reverse transfer capacitances(Typical:7.4pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise spec