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CS4N90A3HD-G

Silicon N-Channel Power MOSFET

CS4N90A3HD-G Features

* Fast Switching

* Low ON Resistance(Rdson≤3Ω)

* Low Gate Charge (Typical Data:25.2nC)

* Low Reverse transfer capacitances(Typical:7.4pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise spec

CS4N90A3HD-G General Description

VDSS 900 CS4N90 A3HD-G, the silicon N-channel Enhanced ID 4 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 100 which reduce the conduction loss, improve switching RDS(ON)Typ 2.6 performance and enhance the avalanche energy. The transistor can be used in various .

CS4N90A3HD-G Datasheet (546.25 KB)

Preview of CS4N90A3HD-G PDF

Datasheet Details

Part number:

CS4N90A3HD-G

Manufacturer:

CR Micro

File Size:

546.25 KB

Description:

Silicon n-channel power mosfet.

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CS4N90A3HD-G Silicon N-Channel Power MOSFET CR Micro

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