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CS4N90FA9HD Silicon N-Channel Power MOSFET

CS4N90FA9HD Description

Silicon N-Channel Power MOSFET ○R CS4N90F A9HD General .
VDSS 900 CS4N90F A9HD, the silicon N-channel Enhanced ID 4 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 35 which r.

CS4N90FA9HD Features

* Fast Switching
* Low ON Resistance(Rdson≤3Ω)
* Low Gate Charge (Typical Data:25.2nC)
* Low Reverse transfer capacitances(Typical:7.4pF)

CS4N90FA9HD Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source V

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Datasheet Details

Part number
CS4N90FA9HD
Manufacturer
CR Micro
File Size
535.35 KB
Datasheet
CS4N90FA9HD-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
CR Micro CS4N90FA9HD-like datasheet