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CS4N90FA9HD

Silicon N-Channel Power MOSFET

CS4N90FA9HD Features

* Fast Switching

* Low ON Resistance(Rdson≤3Ω)

* Low Gate Charge (Typical Data:25.2nC)

* Low Reverse transfer capacitances(Typical:7.4pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise spec

CS4N90FA9HD General Description

VDSS 900 CS4N90F A9HD, the silicon N-channel Enhanced ID 4 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 35 which reduce the conduction loss, improve switching RDS(ON)Typ 2.6 performance and enhance the avalanche energy. The transistor can be used in various po.

CS4N90FA9HD Datasheet (535.35 KB)

Preview of CS4N90FA9HD PDF

Datasheet Details

Part number:

CS4N90FA9HD

Manufacturer:

CR Micro

File Size:

535.35 KB

Description:

Silicon n-channel power mosfet.

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CS4N90FA9HD Silicon N-Channel Power MOSFET CR Micro

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