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CS13N90AKR-G Silicon N-Channel Power MOSFET

CS13N90AKR-G Description

Silicon N-Channel Power MOSFET ○R CS13N90 AKR-G General .
VDSS 900 CS13N90 AKR-G, the silicon N-channel Enhanced ID 13 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 227 whi.

CS13N90AKR-G Features

* Fast Switching
* Low ON Resistance(Rdson≤0.68Ω)
* Low Gate Charge (Typical Data: 87nC)
* Low Reverse transfer capacitances(Typical: 3.3pF)
* 100% Single Pulse avalanche energy Test

CS13N90AKR-G Applications

* Power switch circuit of inverter and welding. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS Drain-to-Source Voltage 900 ID IDMa1 VGS EAS a2 dv/dt a3 Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu

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Datasheet Details

Part number
CS13N90AKR-G
Manufacturer
CR Micro
File Size
485.04 KB
Datasheet
CS13N90AKR-G-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
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