Datasheet Details
| Part number | CS3N90A3H1-G |
|---|---|
| Manufacturer | CR Micro |
| File Size | 927.93 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
|
| Part number | CS3N90A3H1-G |
|---|---|
| Manufacturer | CR Micro |
| File Size | 927.93 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
|
VDSS 900 CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which reduce the conduction loss, improve switching RDS(ON)Typ 5 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.
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