CGHV1F025S GaN HEMT

Cree

Description

CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed.
RES, 100, OHM, +1/-1%, 1/16 W, 0603 RES, 10, OHM, +1/-1%, 1/16 W, 0603 CAP, 1pF, ±0.

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Datasheet Specifications

Part number: CGHV1F025S
Manufacturer: Cree
File Size: 966.88 KB
Datasheet: CGHV1F025S-Cree.pdf
Description: GaN HEMT

Features

* Up to 15 GHz Operation
* 25 W Typical Output Power
* 11 dB Gain at 9.4 GHz

Applications

* The datasheet specifications are based on a X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40V to as low as 20V VDD, maintaining hi

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CGHV1F025S GaN HEMT Cree

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