CGHV1F025S
Cree
966.88kb
Gan hemt. RES, 100, OHM, +1/-1%, 1/16 W, 0603 RES, 10, OHM, +1/-1%, 1/16 W, 0603 CAP, 1pF, ±0.1 pF, 0603, ATC CAP, 1.8pF, ±0.1 pF, 0603, ATC CA
TAGS
📁 Related Datasheet
CGHV1F025S - GaN HEMT
(MACOM)
CGHV1F025S
25 W, DC - 15 GHz, 40 V, GaN HEMT
Description
The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT.
CGHV1F025S - GaN HEMT
(Wolfspeed)
CGHV1F025S
25 W, DC - 15 GHz, 40 V, GaN HEMT
Description
Wolfspeed’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transist.
CGHV1F006S - GaN HEMT
(Cree)
CGHV1F006S
6 W, DC - 15 GHz, 40V, GaN HEMT
Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed .
CGHV1F006S - GaN HEMT
(Wolfspeed)
CGHV1F006S
6 W, DC - 15 GHz, 40 V, GaN HEMT
Description
Wolfspeed’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transisto.
CGHV14250 - GaN HEMT
(Cree)
CGHV14250
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HE.
CGHV14250 - GaN HEMT
(Wolfspeed)
CGHV14250
250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems
Description
Wolfspeed’s CGHV14250 is a gallium nitride (GaN) high electron mobility t.
CGHV14500 - GaN HEMT
(Cree)
CGHV14500
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HE.
CGHV14500F - GaN HEMT
(MACOM)
CGHV14500F
500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems
Description
The CGHV14500 is a gallium nitride (GaN) high electron mobility transis.
CGHV14800 - GaN HEMT
(Cree)
CGHV14800
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transisto.
CGHV14800 - GaN HEMT
(Wolfspeed)
CGHV14800
800 W, 960 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
Description
Wolfspeed’s CGHV14800 is a gallium nitride (GaN) high electron mo.