CGHV1F025S

GaN HEMT

Cree

CGHV1F025S Features

* Up to 15 GHz Operation

* 25 W Typical Output Power

* 11 dB Gain at 9.4 GHz

* Application circuit for 8.9 - 9.6 GHz Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rati

CGHV1F025S General Description

RES, 100, OHM, +1/-1%, 1/16 W, 0603 RES, 10, OHM, +1/-1%, 1/16 W, 0603 CAP, 1pF, ±0.1 pF, 0603, ATC CAP, 1.8pF, ±0.1 pF, 0603, ATC CAP, 0.6pF, ±0.1 pF, 0603, ATC CAP, 10 pF, ±5%, 0603, ATC CAP, 470 pF, 5%, 100 V, 0603, X CAP, 33000 pF, 0805, 100V, X7R CAP, 1.0 UF, 100V, 10%, X7R, 1210 CAP, 10 UF, 16.

CGHV1F025S Datasheet (966.88 KB)

CGHV1F025S Datasheet Preview — Preview of CGHV1F025S PDF

Datasheet Details

Part number:

CGHV1F025S

Manufacturer:

Cree

File Size:

966.88 KB

Description:

Gan hemt.
CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed.

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CGHV1F025S GaN HEMT Cree

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CGHV1F025S Features

CGHV1F025S General Description

Datasheet Details

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CGHV1F025S Distributor