CGHV1J070D
Cree
1.07MB
Gan hemt die.
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CGHV1J070D - GaN HEMT Die
(Wolfspeed)
CGHV1J070D
70 W, 18.0 GHz, GaN HEMT Die
Description
Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
CGHV1J006D - GaN HEMT Die
(Wolfspeed)
CGHV1J006D
6 W, 18.0 GHz, GaN HEMT Die
Description
Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) .
CGHV1J006D - GaN HEMT Die
(Cree)
CGHV1J006D
6 W, 18.0 GHz, GaN HEMT Die
Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon.
CGHV1J025D - GaN HEMT Die
(Wolfspeed)
CGHV1J025D
25 W, 18.0 GHz, GaN HEMT Die
Description
Cree’s CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
CGHV14250 - GaN HEMT
(Cree)
CGHV14250
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HE.
CGHV14250 - GaN HEMT
(Wolfspeed)
CGHV14250
250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems
Description
Wolfspeed’s CGHV14250 is a gallium nitride (GaN) high electron mobility t.
CGHV14500 - GaN HEMT
(Cree)
CGHV14500
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HE.
CGHV14500F - GaN HEMT
(MACOM)
CGHV14500F
500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems
Description
The CGHV14500 is a gallium nitride (GaN) high electron mobility transis.
CGHV14800 - GaN HEMT
(Cree)
CGHV14800
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transisto.
CGHV14800 - GaN HEMT
(Wolfspeed)
CGHV14800
800 W, 960 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
Description
Wolfspeed’s CGHV14800 is a gallium nitride (GaN) high electron mo.