* It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. PN: CGHV1J070D FEATURES
* 17 dB Typ. Small Signal Gain at 10 GHz
* 60% Typ. PAE at 10 GHz
* 70 W Typical Psat
* 40 V Operation
* Up to 18GH
CGHV1J070D Datasheet (1.07 MB)
CGHV1J070D
Cree
1.07 MB
Gan hemt die.
CGHV1J070D
70 W, 18.0 GHz, GaN HEMT Die
Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silico.
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