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EMA06N03AN N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMA06N03AN Description

  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%.

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Datasheet Details

Part number
EMA06N03AN
Manufacturer
Excelliance MOS
File Size
227.87 KB
Datasheet
EMA06N03AN-ExcellianceMOS.pdf
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS
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