FDMS8690 Datasheet (Fairchild Semiconductor)

FDMS8690, N-Channel MOSFET

This device has been designed specifically to improve the efficiency of DC-DC converters.

Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses.

Low gate resistance and very low Miller charge enable excellent

FDMS8690 Features

* Max rDS(on) = 9.0mΩ at VGS = 10V, ID = 19.8A Max rDS(on) = 12.5mΩ at VGS = 4.5V, ID = 11.5A High performance trench technology for extremely low rDS(on) and gate charge Minimal Qgd (2.9 nC typical) RoHS Compliant Applications

* High Efficien