FDP083N15A N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDP083N15A * N-Channel PowerTrench® MOSFET April 2015 FDP083N15A N-Channel PowerTrench® MOSFET 150 V, 117 A, 8.3 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance whil.

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Datasheet Specifications

Part number: FDP083N15A
Manufacturer: Fairchild Semiconductor
File Size: 655.88 KB
Datasheet: FDP083N15A-FairchildSemiconductor.pdf
Description: N-Channel PowerTrench MOSFET

Features

* RDS(on) = 6.85 mΩ ( Typ. ) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge, QG = 64.5 nC (Typ. )
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter D GDS TO-220 G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM E

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FDP083N15A N-Channel PowerTrench MOSFET Fairchild Semiconductor

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