FDP085N10A Datasheet, Mosfet, ON Semiconductor

FDP085N10A Features

• Mosfet
• RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A
• Fast Switching Speed
• Low Gate Charge, QG = 31 nC (Typ.)
• High Performance Trench Technology for E

PDF File Details

Part number:

FDP085N10A

Manufacturer:

ON Semiconductor ↗

File Size:

3.93MB

Download:

📄 Datasheet

Description:

N-channel mosfet. This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench® process that has been tailored to minimize the on-state resis

FDP085N10A Application

• Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Unin

TAGS

FDP085N10A

ON Semiconductor

📁 Related Datasheet

FDP085N10A - N-Channel PowerTrench MOSFET (micross)
N-Channel Power Trench Mosfet Chip 100V, 96A, 8.5mΩ1 Part FDP085N10A V(BR)DSS 100V IDn 96A RDS(on) Max 8.5mΩ1 Die Size 2.4 x 4.4 mm2 See page 2 .

FDP085N10A - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDP085N10A — N-Channel PowerTrench® MOSFET FDP085N10A N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ November 2013 Features • RDS(on) = 7.35 mΩ .

FDP085N10A - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche .

FDP083N15A - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDP083N15A — N-Channel PowerTrench® MOSFET April 2015 FDP083N15A N-Channel PowerTrench® MOSFET 150 V, 117 A, 8.3 mΩ Features • RDS(on) = 6.85 mΩ ( .

FDP020N06B - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDP020N06B — N-Channel PowerTrench® MOSFET FDP020N06B N-Channel PowerTrench® MOSFET 60 V, 313 A, 2 mΩ November 2013 Features • RDS(on) = 1.65 mΩ ( .

FDP023N08B - MOSFET (Fairchild Semiconductor)
FDP023N08B — N-Channel PowerTrench® MOSFET FDP023N08B N-Channel PowerTrench® MOSFET 75 V, 242 A, 2.35 mΩ November 2013 Features • RDS(on) = 1.96 mΩ.

FDP025N06 - MOSFET (Fairchild Semiconductor)
FDP025N06 — N-Channel PowerTrench® MOSFET FDP025N06 N-Channel PowerTrench® MOSFET 60 V, 265 A, 2.5 mΩ November 2013 Features • RDS(on) = 1.9 mΩ (Ty.

FDP027N08B - N-Channel MOSFET (ON Semiconductor)
FDP027N08B — N-Channel PowerTrench® MOSFET FDP027N08B N-Channel PowerTrench® MOSFET 80 V, 223 A, 2.7 mΩ Features • RDS(on) = 2.21 mΩ ( Typ.) @ VGS =.

FDP027N08B - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDP027N08B — N-Channel PowerTrench® MOSFET FDP027N08B N-Channel PowerTrench® MOSFET 80 V, 223 A, 2.7 mΩ November 2013 Features • RDS(on) = 2.21 mΩ .

FDP030N06 - MOSFET (Fairchild Semiconductor)
FDP030N06 — N-Channel PowerTrench® MOSFET FDP030N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.2 mΩ November 2013 Features • RDS(on) = 2.6 mΩ (Ty.