FDP085N10A

N-Channel MOSFET

ON Semiconductor

FDP085N10A Features

* RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A

* Fast Switching Speed

* Low Gate Charge, QG = 31 nC (Typ.)

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability

* RoHS Compliant Description Thi

FDP085N10A General Description

This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications

* Synchronous Rectification for ATX / Server / Telecom PSU

* Battery Protection Ci.

FDP085N10A Datasheet (3.93 MB)