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FDP085N10A - N-Channel MOSFET

FDP085N10A Description

FDP085N10A * N-Channel PowerTrench® MOSFET FDP085N10A N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ .
This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench® process that has been tailored to minimize the on-state resistance while maint.

FDP085N10A Features

* RDS(on) = 7.35 mΩ (Typ. ) @ VGS = 10 V, ID = 96 A
* Fast Switching Speed
* Low Gate Charge, QG = 31 nC (Typ. )
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

FDP085N10A Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Paramet

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDP085N10A-like datasheet