Datasheet Details
- Part number
- FDP085N10A
- Manufacturer
- ON Semiconductor ↗
- File Size
- 3.93 MB
- Datasheet
- FDP085N10A-ONSemiconductor.pdf
- Description
- N-Channel MOSFET
FDP085N10A Description
FDP085N10A * N-Channel PowerTrench® MOSFET FDP085N10A N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ .
This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench® process that has been tailored to minimize the on-state resistance while maint.
FDP085N10A Features
* RDS(on) = 7.35 mΩ (Typ. ) @ VGS = 10 V, ID = 96 A
* Fast Switching Speed
* Low Gate Charge, QG = 31 nC (Typ. )
* High Performance Trench Technology for Extremely Low
RDS(on)
* High Power and Current Handling Capability
FDP085N10A Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
D
GDS
TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
TJ, TSTG TL
Paramet
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