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FDMS3610S MOSFET

FDMS3610S Description

FDMS3610S PowerTrench® Power Stage December 2011 FDMS3610S PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET .
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

FDMS3610S Features

* Q1: N-Channel
* Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A
* Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A Q2: N-Channel
* Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
* Low inductance packaging shortens

FDMS3610S Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE

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