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FDMS86101A - N-Channel MOSFET

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FDMS86101A Product details

Description

Shielded Gate MOSFET Technology Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

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