Datasheet Details
- Part number
- FDP023N08B
- Manufacturer
- Fairchild Semiconductor
- File Size
- 643.28 KB
- Datasheet
- FDP023N08B-FairchildSemiconductor.pdf
- Description
- MOSFET
FDP023N08B Description
FDP023N08B * N-Channel PowerTrench® MOSFET FDP023N08B N-Channel PowerTrench® MOSFET 75 V, 242 A, 2.35 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.
FDP023N08B Features
* RDS(on) = 1.96 mΩ ( Typ. ) @ VGS = 10 V, ID = 75 A
* Low FOM RDS(on)
* QG
* Low Reverse Recovery Charge, Qrr
* Soft Reverse Recovery Body Diode
* Enables Highly Efficiency in Synchronous Rectification
* Fast Switching Speed
* 100% UIL Tested
FDP023N08B Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* DC motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverte
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol
Parameter
VDSS V
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