Datasheet4U Logo Datasheet4U.com

FDS89141 Dual N-Channel MOSFET

FDS89141 Description

FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 3.5 A, 62 .
Shielded Gate MOSFET Technology. Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3. Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.

FDS89141 Applications

* Synchronous Rectifier
* Primary Switch For Bridge Topology D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 D2 5 D2 6 Q2 D1 7 Q1 D1 8 4 G2 3 S2 2 G1 1 S1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gat

📥 Download Datasheet

Preview of FDS89141 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FDS8949 - Dual N-Channel MOSFET (ON Semiconductor)
  • FDS8949-F085 - Dual N-Channel MOSFET (ON Semiconductor)
  • FDS8958A-F085 - Dual N&P-Channel MOSFET (ON Semiconductor)
  • FDS8958B - Dual N & P-Channel Power MOSFET (ON Semiconductor)
  • FDS8978 - N-Channel MOSFET (ON Semiconductor)
  • FDS8984 - N-Channel MOSFET (ON Semiconductor)
  • FDS8984-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDS8984-F40 - N-Channel MOSFET (ON Semiconductor)

📌 All Tags

Dual N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDS89141-like datasheet