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FQAF47P06 60V P-Channel MOSFET

FQAF47P06 Description

FQAF47P06 May 2001 QFET FQAF47P06 60V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQAF47P06 Features

* -38A, -60V, RDS(on) = 0.026Ω @VGS = -10 V Low gate charge ( typical 84 nC) Low Crss ( typical 320 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating S !
* G! ▶

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