FQD11P06 60V P-Channel MOSFET

Fairchild Semiconductor

FQD11P06 Description

FQD11P06 / FQU11P06 * P-Channel QFET® MOSFET FQD11P06 / FQU11P06 P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ Januray 2014 .
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQD11P06 Features

* -9.4 A, -60 V, RDS(on) = 185 mΩ (Max. ) @ VGS = -10 V, ID = -4.7 A
* Low Gate Charge (Typ. 13 nC)
* Low Crss (Typ. 45 pF)
* 100% Avalanche Tested G S D D-PAK GDS S G I-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS

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Datasheet Details

Part number: FQD11P06
Manufacturer: Fairchild Semiconductor
File Size: 1.22 MB
Datasheet: FQD11P06_FairchildSemiconductor.pdf
Description: 60V P-Channel MOSFET

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60V P-Channel MOSFET Fairchild Semiconductor

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