Datasheet4U Logo Datasheet4U.com

FPD7612P70 - HI-FREQUENCY PACKAGED PHEMT

FPD7612P70 Description

PRELIMINARY * PERFORMANCE * 20 dBm Output Power (P1dB) * 21 dB Power Gain (G1dB) at 1.85 GHz * 0.7 dB Noise Figure at .
AND APPLICATIONS The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).

FPD7612P70 Applications

* The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 200 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. . The FPD7612 is also available in die form . Typical applications inclu

📥 Download Datasheet

Preview of FPD7612P70 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FPD03784 - TFT-LCD Column Driver (National Semiconductor)
  • FPD10000AF - 10W PACKAGED POWER PHEMT (Filtronic)
  • FPD10000V - 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS (Filtronic)
  • FPD1000AS - 1W PACKAGED POWER PHEMT (Filtronic)
  • FPD1000V - 1W POWER PHEMT (Filtronic)
  • FPD1050 - 0.75W POWER PHEMT (Filtronic)
  • FPD1500DFN - HIGH LINEARITY PACKAGED PHEMTT (Filtronic)
  • FPD1500P100 - 1W PACKAGED POWER PHEMT (Filtronic)

📌 All Tags

HI-FREQUENCY PACKAGED PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors FPD7612P70-like datasheet