* ndwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOURS x AMPS2) 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampe
MRF6S23100Hxx Datasheet (416.72 KB)
MRF6S23100Hxx
Freescale Semiconductor
416.72 KB
Rf power dield effect transistors.
Freescale Semiconductor Technical Data
Document Number: MRF6S23100H Rev. 0, 8/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode.
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