MRF6S23100Hxx RF Power Dield Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev.0, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
Part Number 2743019447 100B5R6CP500X C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AS GRM55DR61H106KA88B NACZF331M63V CRC120610R0F100 Manuf.

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Datasheet Specifications

Part number: MRF6S23100Hxx
Manufacturer: Freescale Semiconductor
File Size: 416.72 KB
Datasheet: MRF6S23100Hxx_FreescaleSemiconductor.pdf
Description: RF Power Dield Effect Transistors

Features

* ndwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOURS x AMPS2) 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampe

Applications

* with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems.
* Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 20 Watts Avg. , Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. P

MRF6S23100Hxx Distributors

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MRF6S23100Hxx Power Dield Effect Transistors Freescale Semiconductor

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