* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Designed for Lower Memory E
MRF6S23140HR3 Datasheet (460.27 KB)
MRF6S23140HR3
Freescale Semiconductor
460.27 KB
Rf power fet.
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Freescale Semiconductor Technical Data
Document Number: MRF6S23140H Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Chann.
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