MRF6S23140HSR3, MRF6S23140HR3 Datasheet - Freescale Semiconductor

MRF6S23140HSR3, MRF6S23140HR3, RF Power FET

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev.1, 5/2006 RF Power Field Effect Transistors N - Chann.
Ferrite Beads, Short 5.

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Designed for Lower Memory E

Applications

* with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C WLL applications.
* Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 28 Watts Avg. , Full Frequency Band, Channel Bandwi

MRF6S23140HR3_FreescaleSemiconductor.pdf