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MRF6S23140HSR3, MRF6S23140HR3 RF Power FET

MRF6S23140HSR3 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev.1, 5/2006 RF Power Field Effect Transistors N - Chann.
Ferrite Beads, Short 5.

MRF6S23140HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Designed for Lower Memory E

MRF6S23140HSR3 Applications

* with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C WLL applications.
* Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 28 Watts Avg. , Full Frequency Band, Channel Bandwi

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF6S23140HSR3, MRF6S23140HR3. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF6S23140HSR3, MRF6S23140HR3
Manufacturer
Freescale Semiconductor
File Size
460.27 KB
Datasheet
MRF6S23140HR3_FreescaleSemiconductor.pdf
Description
RF Power FET
Note
This datasheet PDF includes multiple part numbers: MRF6S23140HSR3, MRF6S23140HR3.
Please refer to the document for exact specifications by model.

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Power FET Freescale Semiconductor
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