MRF6S24140HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev.0, 3/2007 RF Power Field Effect Transistors N - Chann.
47 Ω, 100 MHz Short Ferrite Beads, Surface Mount 5.

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Datasheet Specifications

Part number: MRF6S24140HR3
Manufacturer: Freescale Semiconductor
File Size: 485.10 KB
Datasheet: MRF6S24140HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units per 5

Applications

* at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.
* Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA, Pout = 140 Watts Power Gain
* 13.2 dB Drain Efficiency
* 45%
* Capable of Handling 10:1 VSWR, @ 28 Vdc, 239

MRF6S24140HR3 Distributors

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MRF6S24140HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF6S24140HR3-like datasheet