MRF6S24140HR3_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF6S24140HSR3, MRF6S24140HR3
Manufacturer:
Freescale Semiconductor
File Size:
485.10 KB
Description:
Rf power field effect transistors.
Note:
This datasheet PDF includes multiple part numbers: MRF6S24140HSR3, MRF6S24140HR3.
Please refer to the document for exact specifications by model.
MRF6S24140HSR3, MRF6S24140HR3, RF Power Field Effect Transistors
47 Ω, 100 MHz Short Ferrite Beads, Surface Mount 5.6 pF Chip Capacitors 0.01 μF, 100 V Chip Capacitors 2.2 μF, 50 V Chip Capacitors 22 μF, 25 V Tantalum Capacitors 47 μF, 16 V Tantalum Capacitors 10 μF, 50 V Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 240 Ω, 1/4 W Chip Resistor Part Number
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev.
0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for large - signal output applications at 2450 MHz.
Device is suitable for use in industrial, medical and scientific applications.
Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA, Pout = 140 Watts Power Gain 13.2 dB Drain Efficiency 45%
MRF6S24140HSR3 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units per 5
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