MRF6S27050HSR3, MRF6S27050HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF6S27050HSR3 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF6S27050HSR3 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF6S27050HSR3** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF6S27050HSR3, MRF6S27050HR3
Manufacturer	Freescale Semiconductor
File Size	493.58 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S27050HR3_FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF6S27050HSR3, MRF6S27050HR3. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF6S27050HSR3 datasheet.

MRF6S27050HSR3 Product details

Description

Part Number 2508051107Y0 2743019447 ATC100B4R3BT500XT ATC100B3R6BT500XT C1825C225J5RAC C1825C103J1RAC T491D226K025AT T491D476K016AT T491D106K050AT GRM32RR71H105KA01B EMVY630GTR331MMH0S EMVK500ADA470MHA0G CRCW12062R7FKEA Manufacturer Fair - Rite Fair - Rite ATC ATC Kemet Kemet Kemet Kemet Kemet Murata Nippon Chemi - Con United Chemi - Con Vishay MRF6S27050HR3 MRF6S27050HSR3 RF Device Data Freescale Semiconductor 3 C11 C14 B2 B1 C3 C9 C10 C8 R1 C7 C6 C4 Top C5 Bottom C12 www.DataSheet4U.com C1

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Published: Mar 20, 2010 |