MRF6V4300NBR1 RF Power Field Effect Transistors

Freescale Semiconductor

MRF6V4300NBR1 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed primarily.
Part Number B1 Short Ferrite Bead 2743019447 B2, B3 Long Ferrite Beads 2743021447 C1 47 μF, 25 V, Tantalum Capacitor T491B476M025AT C2, C3.

MRF6V4300NBR1 Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved Class C Operation
* 225°C Capable Pla

MRF6V4300NBR1 Applications

* with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
* Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 450 MHz Power Gain
* 22 dB Drain Efficiency
* 60%
* Capable

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MRF6V4300NBR1 Datasheet Preview — Preview of MRF6V4300NBR1 PDF

Datasheet Details

Part number: MRF6V4300NBR1
Manufacturer: Freescale Semiconductor
File Size: 810.98 KB
Datasheet: MRF6V4300NBR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

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Power Field Effect Transistors Freescale Semiconductor

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