MRF6V4300NBR1 - RF Power Field Effect Transistors
Part Number B1 Short Ferrite Bead 2743019447 B2, B3 Long Ferrite Beads 2743021447 C1 47 μF, 25 V, Tantalum Capacitor T491B476M025AT C2, C3 22 μF, 50 V, Chip Capacitors C5750JF1H226ZT C4, C5, C6, C7 1 μF, 100 V, Chip Capacitors C3225JB2A105KT C8, C9, C10 15 nF, 100 V, Chip Capacitors
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed primarily for CW large signal output and driver applications with frequencies up to 600 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 450 MHz Power Gain 22 dB Drain Efficiency 60%
MRF6V4300NBR1 Features
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved Class C Operation
* 225°C Capable Pla
