* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved Class C Operation
* 225°C Capable Pla
MRF6V4300NBR1 Datasheet (810.98 KB)
MRF6V4300NBR1
Freescale Semiconductor
810.98 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N
*Channel Enhancement
*Mode Lateral MOSFETs
Designed primarily.
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