* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved Class C Operation
* 225°C Capable Pla
MRF6V4300NR1 Datasheet (810.98 KB)
MRF6V4300NR1
Freescale Semiconductor
810.98 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N
*Channel Enhancement
*Mode Lateral MOSFETs
Designed primarily.
📁 Related Datasheet
MRF6V4300NBR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6V10250HSR3 RF Power Field Effect Transistor (Freescale Semiconductor)
MRF6V12500GS RF Power LDMOS Transistors (NXP)
MRF6V12500H RF Power LDMOS Transistors (NXP)
MRF6V12500HR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6V12500HS RF Power LDMOS Transistors (NXP)
MRF6V12500HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6V13250HR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6V13250HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6V14300HR3 RF Power Field Effect Transistors (Motorola)
