Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed primarily for CW large signal output and driver applications with frequencies up to 600 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 450 MHz Power Gain 22 dB Drain Efficiency 60%