MRF6VP21KHR6 RF Power FET

Freescale Semiconductor

MRF6VP21KHR6 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N *Channel Enhancement *Mode Lateral MOSFET Designed primarily f.

MRF6VP21KHR6 Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* CW Operation Capability with Adequate Cooling
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Designed for Push
* Pull Operation
* Gr

MRF6VP21KHR6 Applications

* with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications.
* Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg. ), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain

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MRF6VP21KHR6 Datasheet Preview — Preview of MRF6VP21KHR6 PDF

Datasheet Details

Part number: MRF6VP21KHR6
Manufacturer: Freescale Semiconductor
File Size: 742.13 KB
Datasheet: MRF6VP21KHR6_FreescaleSemiconductor.pdf
Description: RF Power FET

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Power FET Freescale Semiconductor

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