MRF6VP21KHR6 Datasheet - Freescale Semiconductor

MRF6VP21KHR6 RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain 24 dB Drain .

MRF6VP21KHR6 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* CW Operation Capability with Adequate Cooling

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* Designed for Push

* Pull Operation

* Gr

MRF6VP21KHR6 Datasheet (742.13 KB)

MRF6VP21KHR6 Datasheet Preview — Preview of MRF6VP21KHR6 PDF

Datasheet Details

Part number:

MRF6VP21KHR6

Manufacturer:

Freescale Semiconductor

File Size:

742.13 KB

Description:

Rf power fet.

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MRF6VP21KHR6 Power FET Freescale Semiconductor

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