MRF6VP11KGSR5 Datasheet - NXP

MRF6VP11KGSR5 RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain 26 dB Dra.

MRF6VP11KGSR5 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* CW Operation Capability with Adequate Cooling

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* Designed for Push

* Pull Operation

* Gr

MRF6VP11KGSR5 Datasheet (853.45 KB)