* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* CW Operation Capability with Adequate Cooling
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Designed for Push
* Pull Operation
* Gr
MRF6VP11KGSR5 Datasheet (853.45 KB)
MRF6VP11KGSR5
853.45 KB
Rf power fet.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N
*Channel Enhancement
*Mode Lateral MOSFETs
Designed primarily.
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