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MRF6VP3450HR5, MRF6VP3450HR6 RF Power FET

MRF6VP3450HR5 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for broad.

MRF6VP3450HR5 Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Input Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Designed for Push
* Pull Operation
* Greater

MRF6VP3450HR5 Applications

* with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large
* signal, common
* source amplifier applications in 50 volt analog or digital television transmitter equipment.
* Typical DVB
* T OFDM Performance: VDD =

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF6VP3450HR5, MRF6VP3450HR6. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF6VP3450HR5, MRF6VP3450HR6
Manufacturer
NXP ↗
File Size
1.12 MB
Datasheet
MRF6VP3450HR6-NXP.pdf
Description
RF Power FET
Note
This datasheet PDF includes multiple part numbers: MRF6VP3450HR5, MRF6VP3450HR6.
Please refer to the document for exact specifications by model.

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Power FET NXP
NXP MRF6VP3450HR5-like datasheet