* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Input Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Designed for Push
* Pull Operation
* Greater
MRF6VP3450HR5 Datasheet (1.12 MB)
MRF6VP3450HR5
1.12 MB
Rf power fet.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N
*Channel Enhancement
*Mode Lateral MOSFETs
Designed for broad.
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