MRF6VP41KHSR6 Datasheet - Freescale Semiconductor

MRF6VP41KHSR6 RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical Pulse Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain 20 dB Drain .

MRF6VP41KHSR6 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* CW Operation Capability with Adequate Cooling

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* Designed for Push

* Pull Operation

* Gr

MRF6VP41KHSR6 Datasheet (1.32 MB)

MRF6VP41KHSR6 Datasheet Preview — Preview of MRF6VP41KHSR6 PDF

Datasheet Details

Part number:

MRF6VP41KHSR6

Manufacturer:

Freescale Semiconductor

File Size:

1.32 MB

Description:

Rf power fet.

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MRF6VP41KHSR6 Power FET Freescale Semiconductor

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