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MRF6VP41KHSR6, MRF6VP41KHR6 RF Power FET

MRF6VP41KHSR6 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for pulse.

MRF6VP41KHSR6 Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* CW Operation Capability with Adequate Cooling
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Designed for Push
* Pull Operation
* Gr

MRF6VP41KHSR6 Applications

* with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
* Typical Pulse Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg. ), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF6VP41KHSR6, MRF6VP41KHR6. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF6VP41KHSR6, MRF6VP41KHR6
Manufacturer
Freescale Semiconductor
File Size
1.32 MB
Datasheet
MRF6VP41KHR6_FreescaleSemiconductor.pdf
Description
RF Power FET
Note
This datasheet PDF includes multiple part numbers: MRF6VP41KHSR6, MRF6VP41KHR6.
Please refer to the document for exact specifications by model.

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Power FET Freescale Semiconductor
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