MRF6VP2600HR6 RF Power FET

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N *Channel Enhancement *Mode Lateral MOSFET Designed primarily f.

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MRF6VP2600HR6 Datasheet Preview — Preview of MRF6VP2600HR6 PDF

Datasheet Specifications

Part number: MRF6VP2600HR6
Manufacturer: Freescale Semiconductor
File Size: 1.47 MB
Datasheet: MRF6VP2600HR6_FreescaleSemiconductor.pdf
Description: RF Power FET

Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* CW Operation Capability with Adequate Cooling
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Designed for Push
* Pull Operation
* Gr

Applications

* with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.
* Typical DVB
* T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg. , f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on C

MRF6VP2600HR6 Distributors

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MRF6VP2600HR6 Power FET Freescale Semiconductor

Freescale Semiconductor MRF6VP2600HR6-like datasheet