* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* CW Operation Capability with Adequate Cooling
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Designed for Push
* Pull Operation
* Gr
MRF6VP2600HR6 Datasheet (1.47 MB)
MRF6VP2600HR6
Freescale Semiconductor
1.47 MB
Rf power fet.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistor
N
*Channel Enhancement
*Mode Lateral MOSFET
Designed primarily f.
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