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MRF6VP11KHR6 RF Power FET

MRF6VP11KHR6 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed primarily.

MRF6VP11KHR6 Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* CW Operation Capability with Adequate Cooling
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Designed for Push
* Pull Operation
* Gr

MRF6VP11KHR6 Applications

* with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
* Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg. ), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain

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Datasheet Details

Part number
MRF6VP11KHR6
Manufacturer
NXP ↗
File Size
853.45 KB
Datasheet
MRF6VP11KHR6-NXP.pdf
Description
RF Power FET

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Power FET NXP
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