MRF6VP11KHR6 - RF Power FET

Datasheet Details

Characterized with Series Equivalent Large--Signal Impedance Parameters.
CW Operation Capability with Adequate Cooling.
Qualified Up to a Maximum of 50 VDD Operation.
Integrated ESD Protection.
Designed for Push--Pull Operation.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel. Doc.

📁 MRF6VP11KHR6 Similar Datasheet

MRF6VP21KHR6 - RF Power FET (Freescale Semiconductor)
MRF6VP2600HR6 - RF Power FET (Freescale Semiconductor)
MRF6VP41KHR6 - RF Power FET (Freescale Semiconductor)
MRF6VP41KHSR6 - RF Power FET (Freescale Semiconductor)
MRF6V10250HSR3 - RF Power Field Effect Transistor (Freescale Semiconductor)
MRF6V12500HR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6V12500HSR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6V13250HR3 - RF Power Field Effect Transistors (Freescale Semiconductor)

Other Datasheets by NXP

Published: Jul 10, 2020 |