Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for broad.
Features
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Input Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Designed for Push
* Pull Operation
* Greater
Applications
* with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large
* signal, common
* source amplifier applications in 50 volt analog or digital television transmitter equipment.
* Typical DVB
* T OFDM Performance: VDD =
