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MRF5S9070NR1 SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

MRF5S9070NR1 Description

Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev.6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode.
Small Ferrite Bead, Surface Mount Large Ferrite Bead, Surface Mount 0.

MRF5S9070NR1 Features

* www. DataSheet4U. com
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Integrated ESD Protection
* 200°C Capable Plastic Package
* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
* In Tape and Reel. R1 Suffix = 500 Units

MRF5S9070NR1 Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
* Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 600 mA, Pout =

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Datasheet Details

Part number
MRF5S9070NR1
Manufacturer
Freescale Semiconductor
File Size
580.15 KB
Datasheet
MRF5S9070NR1_FreescaleSemiconductor.pdf
Description
SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

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SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND POWER MOSFET Freescale Semiconductor
Freescale Semiconductor MRF5S9070NR1-like datasheet