MRF8P26080HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF8P26080HR3 Datasheet Preview — Preview of MRF8P26080HR3 PDF

Datasheet Details

Part number	MRF8P26080HR3
Manufacturer	Freescale Semiconductor
File Size	558.08 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8P26080HR3-FreescaleSemiconductor.pdf

MRF8P26080HR3 Product details

Description

Part Number C1, C2, C3, C4, C5, C6, C7, C8 22 pF Chip Capacitors ATC600F220JT250XT C9, C10 3.3 μF, 50 V Chip Capacitors GRM32DR71H335KA88B C11, C12 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L C13, C14 4.7 μF, 50 V Chip Capacitors GRM31CR71H475KA12L C15, C16 0.6 pF Chip Capacitors ATC600F0R6BT250XT C17, C18 330 μF, 35 V Electrolytic Capacitors MCGPR35V337M10x16--RH R1 50 Ω, 8 W Chip Resistor 060120A15Z50--2 R2, R3 4.75 Ω, 1/4 W Chip Resistors CRCW12064R75FNEA Z1 2500 M

Features

Production Tested in a Symmetrical Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.

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Published: Jul 21, 2015 |